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Conference NATO Advanced Research Workshop on Science and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh Environment (2004 : Kiev, Ukraine)
Title Science and technology of semiconductor-on-insulator structures and devices operating in a harsh environment / edited by Denis Flandre, Alexei N. Nazarov and Peter L.F. Hemment.
Imprint Dordrecht ; London : Kluwer Academic in cooperation with NATO Scientific Affairs Division, 2005.

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Conference NATO Advanced Research Workshop on Science and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh Environment (2004 : Kiev, Ukraine)
Series NATO science series. Series II, Mathematics, physics, and chemistry ; v. 185
NATO science series. Series II, Mathematics, physics, and chemistry ; v. 185.
Subject Semiconductors -- Congresses.
Insulating materials -- Congresses.
Silicon-on-insulator technology -- Congresses.
Alt Name Flandre, Denis.
Nazarov, A. N. (Alexei N.)
Hemment, P. L. F. (Peter L. F.)
North Atlantic Treaty Organization. Scientific Affairs Division.
Description 1 online resource (x, 348 pages) : illustrations.
polychrome rdacc
Note Papers from the NATO Advanced Research Workshop on Science and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh Environment.
Bibliography Note Includes bibliographical references and index.
Contents Cover -- Table of Contents -- PREFACE -- TECHNOLOGY AND ECONOMICS -- High temperature electronics ... cluster effects -- 1. INTRODUCTION -- 2. THE EUROPEAN CLUSTER FOR AUTOMOTIVE HIGH TEMPERATURE ELECTRONICS -- 3. DEVELOPMENT OF SOI CMOS ELECTRONICS UNDER THE DEEPTREK PROGRAM -- 4. ACKNOWLEDGEMENTS -- On the evolution of SOI materials and devices -- 1. INTRODUCTION -- 2. SOI MATERIALS -- 3. SOI MOSFETS -- 4. CONCLUSION -- SOI Technology as a basis for microphotonic-microelectronic integrated devices -- 1. INTRODUCTION -- 2. PHOTONIC CRYSTALS -- 3. CONCLUSION -- SOI MATERIAL TECHNOLOGIES -- Smart Cut Technology: the path for advanced SOI substrates -- 1. INTRODUCTION -- 2. THE SMART CUT TECHNOLOGY DESCRIPTION -- 3. PURE UNIBOND SOI WAFERS -- 4. SILICON ONTO INSULATING SUBSTRATES -- 5. SILICON ONTO SEVERAL BURIED LAYERS: FROM THE SOI TO THE SOIM TECHNOLOGY -- 6. MULTIPLE SOI LAYERS STACKED BY MULTIPLE USE OF THE SMART CUT TECHNOLOGY -- 7. STRAINED-SILICON ON SIGE-ON-INSULATOR (SGOI) AND STRAINED SOI (sSOI) -- 8. GeOI (GERMANIUM-ON-INSULATOR) -- 9. OTHER APPLICATIONS -- 10. CONCLUSION -- Porous silicon based SOI: history and prospects -- 1. INTRODUCTION -- 2. PS SOI FABRICATION METHODS -- 3. PATENT ANALYSIS AND PROSPECTS -- 4. SUMMARY -- Achievement of SiGe-on-insulator technology -- 1. INTRODUCTION -- 2. SIMOX -- 3. BONDING -- 4. GROWTH OF SiGe ON TOP OF SOI -- 5. SUMMARY -- CVD diamond films for SOI technologies -- 1. INTRODUCTION -- 2. EXPERIMENTAL DETAILS AND RESULTS -- 3. CONCLUSIONS -- Radical beam quasiepitaxy technology for fabrication of wide-gap semiconductors on insulator -- 1. INTRODUCTION -- 2. RADICAL BEAM QUASIEPITAXY -- 3. EXCITON PHOTOLUMINESCENCE OF ZnO LAYERS WITH?=1011?cm AND?= 1013?cm -- 4. OPTICAL PROPERTIES of p-TYPE ZnO -- 5. CONCLUSION -- Impact of hydrostatic pressure during annealing of Si:O on creation of SIMOX-like structures -- 1. INTRODUCTION -- 2. EXPERIMENTAL DETAILS -- 3. RESULTS AND DISCUSSION -- SiO2 and Si3N4 phase formation by ion implantation with in-situ ultrasound treatment -- 1. INTRODUCTION -- 2. EXPERIMENTAL -- 3. RESULTS AND DISCUSSION -- 4. CONCLUSIONS -- Fabrication and characterisation of Silicon On Insulator substrates incorporating thermal vias -- 1. INTRODUCTION -- 2. EXPERIMENTAL -- 3. FABRICATION OF SOI INCORPORATING THERMAL VIAS -- 4. CHARACTERISATION OF TVSOI -- 5. CONCLUSIONS -- RELIABILITY AND OPERATION OF SOI DEVICES IN HARSH ENVIRONMENT -- Reliability and electrical fluctuations in advanced SOI CMOS devices -- 1. INTRODUCTION -- 2. DEVICES USED -- 3. LOW FREQUENCY NOISE -- 4. HOT CARRIER RELIABILITY -- 5. CONCLUSION -- Hydrogen and high-temperature charge instability of SOI structures and MOSFETs -- 1. INTRODUCTION -- 2. STRUCTURE OF A-SIO2 NETWORK IN GATE AND BURIED OXIDES -- 3. HYDROGEN ASSOCIATED DEFECTS IN A-SIO2 -- 4. HYDROGEN DIFFUSION IN A-SIO2 -- 5. HYDROGEN GENERATION DUE TO ACTIVE TREATMENTS OF A-SIO2 -- 6. HIGH-TEMPERATURE CHARGE INSTABILITY OF SOI STRUCTURE AND MOSFETS -- 7. CONCLUSION -- Recent advances in SOI MOSFET devices and circuits for ultra-low power / high temp.
Access Online access available only to subscribers.
Summary This proceedings volume archives the contributions of the speakers who attended the NATO Advanced Research Workshop on zScience and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environmenty held at the Sanatorium Puscha Ozerna, th th Kyiv, Ukraine, from 25 to 29 April 2004. The semiconductor industry has maintained a very rapid growth during the last three decades through impressive technological achievements which have resulted in products with higher performance and lower cost per function. After many years of development semiconductor-on-insulator materials have entered volume production and will increasingly be used by the manufacturing industry. The wider use of semiconductor (especially silicon) on insulator materials will not only enable the benefits of these materials to be further demonstrated but, also, will drive down the cost of substrates which, in turn, will stimulate the development of other novel devices and applications. In itself this trend will encourage the promotion of the skills and ideas generated by researchers in the Former Soviet Union and Eastern Europe and their incorporation in future collaborations.
Note English.
Print version record.
ISBN 1402030134 (electronic bk.)
9781402030130 (electronic bk.)
1402030118
9781402030116
1402030126 (pbk.)
9781402030123 (pbk.)
661026368X
9786610263684
ISBN/ISSN 10.1007/1-4020-3013-4
OCLC # 63162294
Additional Format Print version: NATO Advanced Research Workshop on Science and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh Environment (2004 : Kiev, Ukraine). Science and technology of semiconductor-on-insulator structures and devices operating in a harsh environment. Dordrecht ; London : Kluwer Academic in cooperation with NATO Scientific Affairs Division, 2005 1402030118 (DLC) 2005298034 (OCoLC)58453797


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