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Author Baca, A. G.
Title Fabrication of GaAs devices / by Albert G. Baca and Carol I.H. Ashby.
Imprint London : Institution of Electrical Engineers, [2005]

Author Baca, A. G.
Series EMIS Processing series ; no. 6
EMIS processing series ; no. 6.
Subject Gallium arsenide semiconductors.
Alt Name Ashby, Carol Iris Hill, 1953-
Institution of Electrical Engineers.
Description 1 online resource (xvii, 350 pages) : illustrations.
polychrome rdacc
Bibliography Note Includes bibliographical references and index.
Contents Acknowledgment; Abbreviations; 1. Introduction to GaAs devices; 2. Semiconductor properties, growth, characterisation and processing techniques; 3. Cleaning and passivation of GaAs and related alloys; 4. Wet etching and photolithography of GaAs and related alloys; 5. Dry etching of GaAs and related alloys; 6. Ohmic contacts; 7. Schottky contacts; 8. Field effect transistors; 9. Heterojunction bipolar transistors; 10. Wet oxidation for optoelectronic and MIS GaAs devices; Glossary; Index.
Summary This book provides fundamental and practical information on all aspects of GaAs processing. The book also gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography, and dry etching. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices.
Note Print version record.
ISBN 9781849190688 (electronic bk.)
1849190682 (electronic bk.)
OCLC # 460736339
Additional Format Print version: Baca, A.G. Fabrication of GaAs devices. London : Institution of Electrical Engineers, ©2005 0863413536 9780863413537 (DLC) 2006494125 (OCoLC)58053392

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