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EBOOK
Title Technology of gallium nitride crystal growth / Dirk Ehrentraut, Elke Meissner, Michal Bockowski, editors.
Imprint Berlin ; Heidelberg ; New York : Springer-Verlag, 2010.

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Series Springer series in materials science, 0933-033X ; 133
Springer series in materials science ; 133.
Subject Gallium nitride.
Crystal growth.
Semiconductors.
Alt Name Ehrentraut, Dirk.
Meissner, Elke.
Bockowski, Michal.
Description 1 online resource (xxi, 326 pages) : illustrations (some color).
polychrome rdacc
Bibliography Note Includes bibliographical references and index.
Contents Cover13; -- Technology of Gallium Nitride Crystal Growth13; -- Foreword13; -- Preface Editors13; -- Contents13; -- Contributors13; -- Part I Market for Bulk GaN Crystals -- 1 Development of the Bulk GaN Substrate Market -- 1.1 Introduction -- 1.2 III-N Device Market Drivers and Forecast -- 1.3 Benefits and Importance of Bulk GaN Substrates -- 1.4 GaN Device Trends for Bulk GaN Substrates -- 1.5 Bulk GaN Substrate Trends -- 1.6 Summary -- References -- Part II Vapor Phase Growth Technology -- 2 Hydride Vapor Phase Epitaxy of GaN -- 2.1 Introduction -- 2.2 Thermodynamic Analysis on HVPE Growth of GaN -- 2.3 Cubic GaN Epitaxial Growth on (100) GaAs Substrate -- 2.4 Comparison of GaN Growth on (111)A and (111)B GaAs Substrates -- 2.5 Ab Initio Calculations of GaN Initial Growth Processes on (111)A and (111)B GaAs Surfaces -- 2.6 Thick GaN Growth on (111)A GaAs Substrate -- 2.7 Preparation of Fe-Doped Semi-insulating GaN Substrates -- References -- 3 Growth of Bulk GaN Crystals by HVPE on SingleCrystalline GaN Seeds -- 3.1 Introduction -- 3.2 Experimental -- 3.3 Experimental Results -- 3.4 Conclusions -- References -- 4 Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Technology -- 4.1 Introduction -- 4.2 Outline of the HVPE-VAS Technology -- 4.3 Preparation of a GaN Template with a Porous TiN Film -- 4.4 HVPE Growth on GaN Templates with a Porous TiN Film -- 4.5 Properties of GaN Wafers Fabricated by HVPE8211;VAS Technology -- 4.6 Summary -- References -- 5 Nonpolar and Semipolar GaN Growth by HVPE -- 5.1 Introduction -- 5.2 Heteroepitaxial Films, Including Substrate Selection -- 5.3 Lateral Epitaxial Overgrowth of Nonpolar, Semipolar GaN -- 5.4 Conclusions and Future Development -- References -- 6 High Growth Rate MOVPE -- 6.1 Introduction -- 6.2 Growth Characteristics of AlGaN and GaNby Conventional MOVPE -- 6.3 Quantum Chemical Study of Vapor-Phase Reaction -- 6.4 Result of High-Growth-Rate GaN by Usinga High-Flow-speed Reactor -- 6.5 Discussion and Summary -- References -- Part III Solution Growth Technology -- 7 Ammonothermal Growth of GaN UnderAmmono-Basic Conditions -- 7.1 Introduction -- 7.2 The Growth Method -- 7.3 Crystal Characterization -- 7.4 Homoepitaxy on Ammonothermal GaN -- 7.5 Conclusions -- References -- 8 A Pathway Toward Bulk Growth of GaNby the Ammonothermal Method -- 8.1 Introduction -- 8.2 Impact of Mineralizer on AmmonothermalSynthesis of GaN -- 8.3 Solubility of GaN in Ammonobasic Solutions -- 8.4 Seeded Growth of GaN with Metallic Ga Nutrient -- 8.5 Seeded Growth of GaN with Polycrystalline GaN Nutrient -- 8.6 Growth of Bulk GaN Crystals and Sliced Wafers -- 8.7 Summary -- References -- 9 Acidic Ammonothermal Growth Technology for GaN -- 9.1 Introduction -- 9.2 Brief History of the Ammonothermal GrowthTechnique of GaN -- 9.3 Growth Technology -- 9.4 Chemistry of the Solution and Growth Mechanism -- 9.5 Properties of Ammonothermal GaN -- 9.6 Prospects and Future developmentsfor Ammonothermal GaN -- References -- Part IV Flux Growth Technology -- 10 High Pressure Solution Growth of Gallium Nitride -- 10.1 Introduction -- 10.2 Growth Method -- 10.3 Spontaneous Crystallization by HPS Growth Method -- 10.4 Seeded Growth by HPS Method -- 10.5 Applications of Pressure Grown GaN Substrates: Blue Las.
Summary This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared. --Book Jacket.
Note Print version record.
ISBN 9783642048302 (ebk.)
3642048307 (ebk.)
9783642048289
3642048285
OCLC # 654396175
Additional Format Print version: Technology of gallium nitride crystal growth. Heidelberg ; New York : Springer, 2010 9783642048289 (DLC) 2010920285 (OCoLC)449851232


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