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Title Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications / editors, Niccolò Rinaldi, Michael Schröter.
Imprint Gistrup: River Publishers, [2018]

Series River Publishers Series in Electronic Materials and Devices
River Publishers series in electronic materials and devices.
Subject Bipolar transistors.
Silicon alloys.
Alt Name Rinaldi, Niccolò, 1964-
Schröter, Michael,
Description 1 online resource (378 pages)
Note Print version record.
Contents Front Cover; Half Title page; RIVER PUBLISHERS SERIES IN ELECTRONIC MATERIALS AND DEVICES; Title Page -- Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications; Copyright page; Contents; Preface; Acknowledgements; List of Contributors; List of Figures; List of Tables; List of Abbreviations; Introduction; Motivation and Objectives of the DOTSEVEN Project; Approach toward Achieving the Ambitious Goals; Overview of Results and Their Impact; References; Chapter 1 -- SiGe HBT Technology; 1.1 Introduction; 1.2 HBT Performance Factors.
1.3 HBT Device and Process Architectures Explored in the DOTSEVEN Project1.3.1 Selective Epitaxial Growth of the Base; DPSA-SEG device architecture; Approaches to overcome limitations of the DPSA-SEG architecture; 1.3.2 Non-selective Epitaxial Growth of the Base; 1.4 Optimization of the Vertical Doping Profile; 1.5 Optimization towards 700 GHz fMAX; 1.6 Summary; References; Chapter 2 -- Device Simulation; 2.1 Numerical Simulation; 2.2 Device Simulation; 2.2.1 TCAD Device Optimization; 2.2.2 Deterministic BTE Solvers; 2.2.3 Drift-diffusion and Hydrodynamic Transport Models.
2.2.4 Simulation Examples2.2.4.1 DD simulation; HD simulation; Effects beyond DD and HD transport; Comparison with experimental data; 2.3 Advanced Electro-thermal Simulation; 2.3.1 Carrier-Phonon System in SiGe HBTs; 2.3.2 Deterministic and Self-consistent Electrothermal Simulation Approach; 2.3.3 Hot Phonon Effects in a Calibrated System; 2.3.4 Thermal Resistance Extraction from the Simulated DC Characteristics; 2.4 Microscopic Simulation of Hot-carrier Degradation; 2.4.1 Physics of Hot-carrier Degradation; 2.4.2 Modeling of Hot-carrier Effects.
2.4.3 Simulation of SiGe HBTs under Stress Conditions Close to the SOA LimitReferences; Chapter 3 -- SiGe HBT Compact Modeling; 3.1 Introduction; 3.2 Overview of HICUM Level 2; 3.3 Modeling of the Quasi-Static Transfer Current; 3.3.1 Basics of the GICCR; 3.3.2 SiGe HBT Extensions; 3.3.3 Temperature Dependence; 3.4 Charge Storage; 3.4.1 Critical Current; 3.4.2 SiGe Heterojunction Barrier; 3.5 Intra-Device Substrate Coupling; 3.6 SiGe HBT Parameter Extraction; 3.6.1 Extraction of Series Resistances; 3.6.2 Extraction of the Transfer Current Parameters; 3.6.3 Physics-Based Parameter Scaling. Standard geometry scaling equation3.6.3.2 Generalized scaling equations; 3.7 Compact Model Application to Experimental Data; References; Chapter 4 -- (Sub)mm-wave Calibration; 4.1 Introduction; 4.2 Multi-mode Propagation and Calibration Transfer at mm-wave; 4.2.1 Parallel Plate Waveguide Mode; 4.2.2 Surface Wave Modes: TM0 and TE1; 4.2.3 Electrically Thin Substrates; 4.2.4 Calibration Transfer; 4.3 Direct On-wafer Calibration; 4.3.1 Characteristic Impedance Extraction of Transmission Lines; 4.4 Direct DUT-plane Calibration; 4.5 Conclusion; References; Chapter 5 -- Reliability.
Note 5.1 Mixed-mode Stress Tests.
ISBN 8793519605
9788793519602 (electronic bk.)
OCLC # 1035518678
Additional Format Print version: Rinaldi, Niccolò. Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications. Aalborg : River Publishers, ©2018 9788793519619

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