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Author Kasper, Erich.
Title Silicon quantum integrated circuits : silicon-germanium heterostructure devices : basics and realisations / E. Kasper, D.J. Paul.
Imprint Berlin ; New York : Springer, 2005.

LOCATION CALL # STATUS MESSAGE
 OHIOLINK SPRINGER EBOOKS    ONLINE  
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Author Kasper, Erich.
Series Nanoscience and technology, 1434-4904
Nanoscience and technology. 1434-4904
Subject Silicon.
Silicon alloys -- Structure.
Germanium.
Germanium alloys -- Structure.
Quantum electronics.
Integrated circuits -- Design and construction.
Heterostructures.
Semiconductors.
Alt Name Paul, D. J.
Add Title Silicon-germanium heterostructure devices : basics and realisations
LOCATION CALL # STATUS MESSAGE
 OHIOLINK SPRINGER EBOOKS    ONLINE  
View online
Author Kasper, Erich.
Series Nanoscience and technology, 1434-4904
Nanoscience and technology. 1434-4904
Subject Silicon.
Silicon alloys -- Structure.
Germanium.
Germanium alloys -- Structure.
Quantum electronics.
Integrated circuits -- Design and construction.
Heterostructures.
Semiconductors.
Alt Name Paul, D. J.
Add Title Silicon-germanium heterostructure devices : basics and realisations
Description 1 online resource (xii, 360 pages) : illustrations.
polychrome rdacc
Bibliography Note Includes bibliographical references.
Contents Cover -- Title Page -- Preface -- Table of Contents -- 1. Introduction -- 1.1 Microelectronics and Optoelectronics -- 1.2 From Microelectronics to Nanoelectronics -- 1.3 Self ... ordering -- 1.4 Further Reading -- 2. Material Science -- 2.1 Growth and Preparation Methods (MBE, CVD, Implantation, Annealing) -- 2.2 Segregation and Diffusion of Dopants and Alloy Materials -- 2.3 Lattice Mismatch and its Implication on Critical Thickness and Interface Structure -- 2.4 Virtual Substrates and Strain Relaxation -- 2.5 Further Reading -- 3. Resumae of Semiconductor Physics -- 3.1 Quantum Mechanics -- 3.2 The Band Structure of Semiconductors -- 3.3 The Concentration of Carriers in a Semiconductor -- 3.4 Electronic Transport in a Semiconductor -- 3.5 Low Dimensional Physics: Quantum Wires and Dots -- 3.6 Lattice Vibrations and Phonons -- 3.7 Optical Properties of Semiconductors -- 3.8 The Continuity Equations Including Recombination and Generation -- 3.9 Further Reading -- 4. Realisation of Potential Barriers -- 4.1 Depletion layer and built in voltage -- 4.2 d-Doping and n-i-p-i Structures -- 4.3 Heterointerfaces (type I, type II), Abruptness and Height of Barriers -- 4.4 Influence of Strain on Bandstructure -- 4.5 Band Alignment of Strained SiGe -- 4.6 Further Reading -- 5. Electronic Device Principles -- 5.1 The p-n Junction -- 5.2 The Silicon Bipolar Transistor -- 5.3 Metal Oxide Semiconductor Field Effect Transistors MOSFETs -- 5.4 Further Reading -- 6. Heterostructure Bipolar Transistors -- HBTs -- 6.1 Trade-off between current gain and speed -- 6.2 The High Speed SiGe HBT -- 6.3 The Linear Graded Profile -- 6.4 SiGe HBT Device Performance -- 6.5 Further Reading -- 7. Hetero Field Effect Transistors (HFETs) -- 7.1 Vertical Heterojunction MOSFETs -- 7.2 Strained-Si CMOS -- 7.3 Metal-Gated MOSFETs -- 7.4 Modulation Doped Field Effect Transistors (MODFETs) -- 7.5 Further Reading -- 8. Tunneling Phenomena -- 8.1 Tunnel Diodes -- 8.2 Resonant Tunnelling -- 8.3 Real Space Transfer (RST) Devices -- 8.4 Single Electron Transistors and Coulomb Blockade -- 8.5 Further Reading -- 9. Optoelectronics -- 9.1 Photonic Devices -- 9.2 The Quantum Cascade Laser -- 9.3 Further Reading -- 10. Integration -- 10.1 The CMOS Inverter and MOS Memory Circuits -- 10.2 Silicon Process Technology -- 10.3 CMOS -- 10.4 Heterolayer Integration Issues -- 10.5 Bipolar and HBT Fabrication Processes -- 10.6 BiCMOS -- 10.7 Strained-Si CMOS -- 10.8 The System on a Chip -- 10.9 Fault Tolerant Architectures -- 10.10 Further Reading -- 11. Outlook -- A. List of variables -- B. Physical Properties of Important Materials at 300K.
Summary "Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics."--Jacket.
Note English.
Print version record.
ISBN 9783540263821
3540263829
354022050X (Cloth)
9783540220503 (Cloth)
6610337853
9786610337859
ISBN/ISSN 10.1007/b137494
OCLC # 209858823
Link Springer e-books
Additional Format Print version: Kasper, Erich. Silicon quantum integrated circuits. Berlin ; New York : Springer, 2005 354022050X 9783540220503 (DLC) 2004116222 (OCoLC)58918935


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