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Conference European Conference on Silicon Carbide and Related Materials (8th : 2010 : Oslo, Norway)
Title Silicon carbide and related materials 2010 : selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), 29 August-2 September 2010, Sundvolden Conference Center, held in Oslo, Norway / edited by Edouard V. Monakhov, Tamás Hornos and Bengt G. Svensson.
Imprint Durnten-Zurich, Switzerland : Trans Tech Publications, 2011.

Conference European Conference on Silicon Carbide and Related Materials (8th : 2010 : Oslo, Norway)
Series Materials science forum, 0255-5476 ; 679-680
Materials science forum ; v. 679-680.
Subject Silicon carbide -- Congresses.
Silicon carbide -- Electric properties -- Congresses.
Silicon-carbide thin films -- Congresses.
Alt Name Monakhov, Edouard V.
Hornos, Tamás.
Svensson, Bengt G.
Add Title ECSCRM 2010
Description 1 online resource (862 pages) : illustrations.
polychrome rdacc
Bibliography Note Includes bibliographical references and indexes.
Contents Silicon Carbide and Related Materials 2010; Committees and Preface; Table of Contents; Chapter 1: SIC Growth; 1.1 Bulk Growth; Enlargement Growth of Large 4H-SiC Bulk Single Crystal; Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal; On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals; Experimental Verification of a Novel System for the Growth of SiC Single Crystals; Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique; Polytype Stability of 4H-SiC Seed Crystal on Solution Growth
Defect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching MethodEffect of Low Frequency Magnetic Field on SiC Solution Growth; Crystal Growth of 4H-SiC on 6H-SiC by Traveling Solvent Method; The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method; Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method; 1.2 Epitaxial Growth; Evolution of Extended Defects during Epitaxial Growths: A Monte Carlo Study; 4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions
Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face SubstratesEffects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8° Off-Cut 4H-SiC Epilayers; Reduction of the Surface Density of Single Shockley Faults by TCS Growth Process; On the Mechanism of Twin Boundary Elimination in 3C-SiC(111) Heteroepitaxial Layers on α-SiC Substrates; Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates; Analytical Model of Stress Relaxation in 3C SiC Layers on Silicon; Structural Investigations of a Sputtered Intermediate Carbonization Layer for 3C-SiC on (111) and (110) Si Substrates
Atomistic Simulation of SiC Growth at the SiC(0001)/Si1-XCx Interface by the Monte Carlo MethodPolarity Control of CVD Grown 3C-SiC on Si(111); Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates -- Defects Analysis and Reduction; Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) Transport; Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates; Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH3)6Si2]; Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas
High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiCGrowth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas; 4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer; Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy; Chaper 2: SIC Characterization; 2.1 Fundamental and Structural Properties; Advanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS Application
Summary This volume contains the proceedings of the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, on August 29th - September 2nd. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading European conference in the field of 'SiC and related materials and their applications'. This volume is divided into five chapters ranging from 'SiC growth' to 'Biosystems' and thus represents a comprehensive coverage of the field. Review from Book News Inc.: Presentations at this sitting of the biennial.
Note Description based on print version record.
ISBN 9783038134626 (electronic bk.)
3038134627 (electronic bk.)
9783037850794
OCLC # 868921918
Additional Format Print version: Silicon carbide and related materials 2010 : selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), 29 August-2 September 2010, Sundvolden Conference Center, held in Oslo, Norway. Durnten-Zurich, Switzerland : Trans Tech Publications, 2011 xxii, 847 pages : illustrations ; 25 cm. Materials science forum ; 679-680 9783037850794 (OCoLC)726748062


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