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Title Oxide reliability : a summary of silicon oxide wearout, breakdown, and reliability / editor, D.J. Dumin.
Imprint [River Edge, NJ] : World Scientific, [2002]

Series Selected topics in electronics and systems ; v. 23
Selected topics in electronics and systems ; v. 23.
Subject Metal oxide semiconductors -- Reliability.
Silicon oxide -- Deterioration.
Alt Name Dumin, D. J.
Description 1 online resource (ix, 270 pages) : illustrations.
polychrome rdacc
Bibliography Note Includes bibliographical references.
Summary Annotation This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field.
Contents Oxide wearout, breakdown, and reliability / D.J. Dumin -- Reliability of flash nonvolatile memories / N. Mielke and J. Chen -- Physics and chemistry of intrinsic time-dependent dielectric breakdown in SiO2 dielectrics / J.W. McPherson -- Breakdown modes and breakdown statistics of ultrathin SiO2 gate oxides / J. Sune, D. Jimenez, and E. Miranda -- MOSFET gate oxide reliability: Anode hole injection model and its applications / Y.-C. Yeo, Q. Lu, and C. Hu.
Note Print version record.
ISBN 9789812778062 (electronic bk.)
9812778063 (electronic bk.)
OCLC # 614462997
Additional Format Print version: Oxide reliability. [River Edge, NJ] : World Scientific, ©2002 9810248423 9789810248420 (DLC) 2002279812 (OCoLC)49996738

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