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LEADER 00000cam  2200661Ii 4500 
001    823937707 
003    OCoLC 
005    20160917040523.5 
006    m     o  d         
007    cr ||||||||||| 
008    130111s2011    sz a    ob    101 0 eng d 
019    840842094 
020    9783038135159|q(electronic bk.) 
020    3038135151|q(electronic bk.) 
020    |z9783037852323 
020    |z3037852321 
035    (OCoLC)823937707|z(OCoLC)840842094 
040    CUS|beng|epn|erda|cCUS|dN$T|dOCLCO|dUA@|dYDXCP|dOCLCF
049    MAIN 
050  4 TK7871.85|b.I574 2011eb 
072  7 TEC|x008090|2bisacsh 
072  7 TEC|x008100|2bisacsh 
082 04 621.38152|223 
111 2  International Meeting on Gettering and Defect Engineering 
       in Semiconductor Technology|0
       /names/nb2012009364|n(14th :|d2011 :|cLoipersdorf, 
245 10 Gettering and defect engineering in semiconductor 
       technology XIV :|bselected papers from the XIVth 
       International Biannual Meeting on Gettering and Defect 
       Engineering in Semiconductor [Technology], (GADEST2011) 
       September 25-30, 2011, Loipersdorf (Fürstenfeld), Austria 
       /|cedited by W. Jantsch and F. Schäffler. 
246 1  |iAlso called:|aGADEST 2011 selected papers 
264  1 Durnten-Zuerich :|bTrans Tech,|c[2011] 
264  4 |c©2011 
300    1 online resource (xii, 520 pages) :|billustrations. 
336    text|btxt|2rdacontent 
337    computer|bc|2rdamedia 
338    online resource|bcr|2rdacarrier 
347    text file|2rdaft|0
490 1  Solid state phenomena,|x1012-0394 ;|vv. 178-179 
504    Includes bibliographical references and indexes. 
520    The papers contained herein cover the most important and 
       timely issues in the field of "Gettering and Defect 
       Engineering in Semiconductor Technology", ranging from the
       theoretical analysis of defect problems to practical 
       engineering solutions, with the emphasis on Si-based 
       materials. Apart from the traditional topics of defect and
       materials engineering, characterization, modeling and 
       simulation, and the co-integration of various material 
       classes, topics such as materials for solar cells and 
       photonics are discussed. Defects in graphene and in 
       nanocrystals and nanowires are also treated, making this a
       very up-to-date survey of the field. Review from Book News
       Inc.: Selected papers from a September 2011 meeting deal 
       with fundamental and technological aspects of defects in 
       electronic materials and devices. Papers are organized 
       into 12 sections on areas such as silicon-based and 
       advanced semiconductor materials, nanocrystals and quantum
       dots, crystalline silicon for solar cells, point defects 
       in Si, defects at interfaces, defect and impurity 
       characterization, gettering and defect engineering, 
       advanced solar cells, silicon-based photonics, and 
       modeling and simulation. Some specific topics addressed 
       include recombination activity of twin boundaries in 
       silicon ribbons, hydrogen decoration of vacancy related 
       complexes in hydrogen implanted silicon, analysis of 
       contaminated oxide-silicon interfaces, and spectroscopic 
       studies of iron and chromium in germanium. Other areas 
       examined include oxygen precipitation studied by X-ray 
       diffraction techniques, structural defect studies of 
       semiconductor crystals with Laue topography, tailoring the
       electrical properties of undoped GaP, and homogeneous and 
       heterogeneous nucleation of oxygen in S-CZ. Jantsch and 
       Schffler are affiliated with Johannes Kepler University, 
588 0  Print version record. 
650  0 Semiconductors|vCongresses.|0
650  0 Getters|0
650  0 Silicon crystals|0
650  0 Electrical engineering|xMaterials|vCongresses.|0http:// 
653 1  Gettering engineering 
653 1  Defect engineering 
653 1  Semiconductor technology 
653 1  GADEST 
655  4 Electronic books. 
655  7 Conference papers and proceedings.|2fast|0http:// 
655  7 Conference papers and proceedings.|2lcgft|0http:// 
700 1  Jantsch, W.|q(Wolfgang),|d1946-|0
700 1  Schläffer, F.|q(Friedrich)|0
776 08 |iPrint version:|aInternational Meeting on Gettering and 
       Defect Engineering in Semiconductor Technology (14th : 
       2011 : Loipersdorf, Austria).|tGettering and defect 
       engineering in semiconductor technology XIV.|dDurnten-
       Zuerich : Trans Tech, ©2011|z9783037852323
830  0 Diffusion and defect data.|nPt. B,|pSolid state phenomena 
       ;|0|vv. 178-
956 40 |u
       db=nlebk&AN=553229|zView online 
990    eBooks on EBSCOhost|bEBSCO eBook Subscription Academic 
       Collection - North America|c2016-09-16|yMaster record 
       variable field(s) change: 245 

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