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LEADER 00000cam 2200721Ii 4500
001 189048352
003 OCoLC
005 20181101045537.1
006 m o d
007 cr cn|||||||||
008 080108s2007 ne a ob 101 0 eng d
019 234536195|a316688878|a318127647|a607348741|a613468344
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|a985032132|a1005765866|a1035713178|a1044256423
|a1044582676|a1056387038|a1056437784|a1058086326
020 9781402063800
020 1402063806
020 1402063784
020 9781402063787
020 9781402063794|q(pbk.)
020 1402063792|q(pbk.)
024 7 10.1007/978-1-4020-6380-0|2doi
035 (OCoLC)189048352|z(OCoLC)234536195|z(OCoLC)316688878
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037 978-1-4020-6378-7|bSpringer|nhttp://www.springerlink.com
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049 MAIN
050 4 TK7871.85|b.N38 2006eb
060 4 Online Book
072 7 TEC|x008100|2bisacsh
072 7 TEC|x008090|2bisacsh
082 04 537.6/22|222
111 2 NATO Advanced Research Workshop on Nanoscaled
Semiconductor-on-Insulator Structures and Devices|d(2006 :
|cSudak, Ukraine)|0http://id.loc.gov/authorities/names/
no2007112606
245 10 Nanoscaled semiconductor-on-insulator structures and
devices /|cedited by S. Hall, A.N. Nazarov, V.S. Lysenko.
264 1 Dordrecht :|bSpringer,|c2007.
300 1 online resource (xiii, 369 pages) :|billustrations.
336 text|btxt|2rdacontent
337 computer|bc|2rdamedia
338 online resource|bcr|2rdacarrier
340 |gpolychrome|2rdacc|0http://rdaregistry.info/termList/
RDAColourContent/1003
490 1 NATO science for peace and security series - B: Physics
and biophysics,|x1871-465X
504 Includes bibliographical references and author index.
505 00 |gNote continued:|tSubstrate effect on the output
conductance frequency response of SOI MOSFETs /|rV.
Kilchytska /|rD. Levacq /|rD. Lederer /|rG. Pailloncy /
|rJ.-P. Raskin /|rD. Flandre --|tInvestigation of
compressive strain effects induced by STI and ESL /|rS.
Zaouia /|rS. Cristoloveanu /|rA.H. Perera --|tCharge
trapping phenomena in single electron NVM SOI devices
fabricated by a self-aligned quantum dot technology /|rA.
Nazarov /|rV. Lysenko /|rX. Tang /|rN. Reckinger /|rV.
Bayot --|tVariability in nanoscale UTB SOI devices and its
impact on circuits and systems /|rA. Asenov /|rK. Samsudin
--|tElectron transport in silicon-on-insulator nanodevices
/|rF. Gamiz /|rA. Godoy /|rC. Sampedro --|tAll quantum
simulation of ultrathin SOI MOSFETs /|rA. Orlikovsky /|rV.
Vyurkov /|rV. Lukichev /|rI. Semenikhin /|rA. Khomyakov --
|tResonant tunneling devices on SOI basis /|rB. Majkusiak
--|tMobility modeling in SOI FETs for different substrate
orientations and strain conditions /|rV. Sverdlov /|rE.
Ungersboeck /|rH. Kosina.
520 The book details many of the key issues associated with
the scaling to nano-dimensions of silicon-on-insulator
structures. Some papers offer new insight particularly at
the device/circuit interface as appropriate for SOI which
is fast becoming a mainstream technology. One of the key
issues concerns mobility degradation in SOI films less
than about 5nm. The advantages of combining scaled SOI
devices with high permittivity (k) dielectric indicates
that potential solutions are indeed available down to the
22nm node even with 5nm SOI films. A further key issue and
potential 'show stopper' for SOI CMOS is highlighted in a
number of invited and contributed papers addressing
atomistic level effects. Results are presented for Monte
Carlo and drift/diffusion modelling together with device
compact models and circuit level simulation and this
provided for a broad exposure of the problems from
intrinsic physics to the circuit level. The scaling to
nano-dimensions takes the technology into the realms of
quantum effects and a number of papers addressed this
aspect from both the technological and physics aspects.
The scope of potential applications for quantum dots,
quantum wires and nanotubes are considered. The use of
semiconductor materials other than Si, on insulator, is
featured in some sections of the book. The potential of
III/V, Ge and other materials to facilitate continuation
down the roadmap is illustrated by a review of the state-
of-the-art.
546 English.
588 0 Print version record.
650 0 Semiconductors|vCongresses.|0http://id.loc.gov/authorities
/subjects/sh2008111509
650 0 Silicon-on-insulator technology|vCongresses.|0http://
id.loc.gov/authorities/subjects/sh2010113108
650 0 Nanoelectromechanical systems|0http://id.loc.gov/
authorities/subjects/sh2006008121|vCongresses.|0http://
id.loc.gov/authorities/subjects/sh99001533
650 0 Nanotechnology|vCongresses.|0http://id.loc.gov/authorities
/subjects/sh2008108196
650 12 Nanotechnology.|0https://id.nlm.nih.gov/mesh/D036103
655 2 Congress.|0https://id.nlm.nih.gov/mesh/D016423
655 4 Electronic books.
655 7 Conference papers and proceedings.|2lcgft|0http://
id.loc.gov/authorities/genreForms/gf2014026068
655 7 Conference papers and proceedings.|2fast|0http://
id.worldcat.org/fast/1423772
700 1 Hall, Steve,|cPh. D.|0http://id.loc.gov/authorities/names/
no2007112605
700 1 Nazarov, A. N.|q(Alexei N.)|0http://id.loc.gov/authorities
/names/n95051578
700 1 Lysenko, V. S.|q(Vladimir S.)|0http://id.loc.gov/
authorities/names/n99273621
773 0 |tSpringer e-books
776 08 |iPrint version:|aNATO Advanced Research Workshop on
Nanoscaled Semiconductor-on-Insulator Structures and
Devices (2006 : Sudak, Ukraine).|tNanoscaled semiconductor
-on-insulator structures and devices.|dDordrecht :
Springer, 2007|z1402063784|z9781402063787
|w(OCoLC)166322330
830 0 NATO Science for Peace and Security series.|nB,|pPhysics
and biophysics.|0http://id.loc.gov/authorities/names/
no2007112607
990 SpringerLink|bSpringer English/International eBooks 2007 -
Full Set|c2018-10-31|yNew collection
springerlink.ebooks2007|5OH1