Return to home page
Searching: Otterbein library catalog
While many OPAL libraries have resumed lending and borrowing, some continue to operate at reduced service levels or limit in-person use to their campus community. Note that pickup services and procedures may differ between libraries. Please contact your library regarding open hours, pickup procedures, specific requests, or other assistance.

LEADER 00000cam  2200721Ii 4500 
001    189048352 
003    OCoLC 
005    20181101045537.1 
006    m     o  d         
007    cr cn||||||||| 
008    080108s2007    ne a    ob    101 0 eng d 
019    234536195|a316688878|a318127647|a607348741|a613468344
020    9781402063800 
020    1402063806 
020    1402063784 
020    9781402063787 
020    9781402063794|q(pbk.) 
020    1402063792|q(pbk.) 
024 7  10.1007/978-1-4020-6380-0|2doi 
035    (OCoLC)189048352|z(OCoLC)234536195|z(OCoLC)316688878
037    978-1-4020-6378-7|bSpringer|n 
040    GW5XE|beng|epn|erda|cGW5XE|dGW5XE|dCEF|dOCLCQ|dSNK|dYNG
049    MAIN 
050  4 TK7871.85|b.N38 2006eb 
060  4 Online Book 
072  7 TEC|x008100|2bisacsh 
072  7 TEC|x008090|2bisacsh 
082 04 537.6/22|222 
111 2  NATO Advanced Research Workshop on Nanoscaled 
       Semiconductor-on-Insulator Structures and Devices|d(2006 :
       |cSudak, Ukraine)|0
245 10 Nanoscaled semiconductor-on-insulator structures and 
       devices /|cedited by S. Hall, A.N. Nazarov, V.S. Lysenko. 
264  1 Dordrecht :|bSpringer,|c2007. 
300    1 online resource (xiii, 369 pages) :|billustrations. 
336    text|btxt|2rdacontent 
337    computer|bc|2rdamedia 
338    online resource|bcr|2rdacarrier 
340    |gpolychrome|2rdacc|0
490 1  NATO science for peace and security series - B: Physics 
       and biophysics,|x1871-465X 
504    Includes bibliographical references and author index. 
505 00 |gNote continued:|tSubstrate effect on the output 
       conductance frequency response of SOI MOSFETs /|rV. 
       Kilchytska /|rD. Levacq /|rD. Lederer /|rG. Pailloncy /
       |rJ.-P. Raskin /|rD. Flandre --|tInvestigation of 
       compressive strain effects induced by STI and ESL /|rS. 
       Zaouia /|rS. Cristoloveanu /|rA.H. Perera --|tCharge 
       trapping phenomena in single electron NVM SOI devices 
       fabricated by a self-aligned quantum dot technology /|rA. 
       Nazarov /|rV. Lysenko /|rX. Tang /|rN. Reckinger /|rV. 
       Bayot --|tVariability in nanoscale UTB SOI devices and its
       impact on circuits and systems /|rA. Asenov /|rK. Samsudin
       --|tElectron transport in silicon-on-insulator nanodevices
       /|rF. Gamiz /|rA. Godoy /|rC. Sampedro --|tAll quantum 
       simulation of ultrathin SOI MOSFETs /|rA. Orlikovsky /|rV.
       Vyurkov /|rV. Lukichev /|rI. Semenikhin /|rA. Khomyakov --
       |tResonant tunneling devices on SOI basis /|rB. Majkusiak 
       --|tMobility modeling in SOI FETs for different substrate 
       orientations and strain conditions /|rV. Sverdlov /|rE. 
       Ungersboeck /|rH. Kosina. 
520    The book details many of the key issues associated with 
       the scaling to nano-dimensions of silicon-on-insulator 
       structures. Some papers offer new insight particularly at 
       the device/circuit interface as appropriate for SOI which 
       is fast becoming a mainstream technology. One of the key 
       issues concerns mobility degradation in SOI films less 
       than about 5nm. The advantages of combining scaled SOI 
       devices with high permittivity (k) dielectric indicates 
       that potential solutions are indeed available down to the 
       22nm node even with 5nm SOI films. A further key issue and
       potential 'show stopper' for SOI CMOS is highlighted in a 
       number of invited and contributed papers addressing 
       atomistic level effects. Results are presented for Monte 
       Carlo and drift/diffusion modelling together with device 
       compact models and circuit level simulation and this 
       provided for a broad exposure of the problems from 
       intrinsic physics to the circuit level. The scaling to 
       nano-dimensions takes the technology into the realms of 
       quantum effects and a number of papers addressed this 
       aspect from both the technological and physics aspects. 
       The scope of potential applications for quantum dots, 
       quantum wires and nanotubes are considered. The use of 
       semiconductor materials other than Si, on insulator, is 
       featured in some sections of the book. The potential of 
       III/V, Ge and other materials to facilitate continuation 
       down the roadmap is illustrated by a review of the state-
546    English. 
588 0  Print version record. 
650  0 Semiconductors|vCongresses.|0
650  0 Silicon-on-insulator technology|vCongresses.|0http:// 
650  0 Nanoelectromechanical systems|0
650  0 Nanotechnology|vCongresses.|0
650 12 Nanotechnology.|0 
655  2 Congress.|0 
655  4 Electronic books. 
655  7 Conference papers and proceedings.|2lcgft|0http:// 
655  7 Conference papers and proceedings.|2fast|0http:// 
700 1  Hall, Steve,|cPh. D.|0
700 1  Nazarov, A. N.|q(Alexei N.)|0
700 1  Lysenko, V. S.|q(Vladimir S.)|0
773 0  |tSpringer e-books 
776 08 |iPrint version:|aNATO Advanced Research Workshop on 
       Nanoscaled Semiconductor-on-Insulator Structures and 
       Devices (2006 : Sudak, Ukraine).|tNanoscaled semiconductor
       -on-insulator structures and devices.|dDordrecht : 
       Springer, 2007|z1402063784|z9781402063787
830  0 NATO Science for Peace and Security series.|nB,|pPhysics 
       and biophysics.|0
990    SpringerLink|bSpringer English/International eBooks 2007 -
       Full Set|c2018-10-31|yNew collection 
View online

If you experience difficulty accessing or navigating this content, please contact the OPAL Support Team