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Conference NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices (2006 : Sudak, Ukraine)
Title Nanoscaled semiconductor-on-insulator structures and devices / edited by S. Hall, A.N. Nazarov, V.S. Lysenko.
Imprint Dordrecht : Springer, 2007.

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Conference NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices (2006 : Sudak, Ukraine)
Series NATO science for peace and security series - B: Physics and biophysics, 1871-465X
NATO Science for Peace and Security series. B, Physics and biophysics.
Subject Semiconductors -- Congresses.
Silicon-on-insulator technology -- Congresses.
Nanoelectromechanical systems -- Congresses.
Nanotechnology -- Congresses.
Alt Name Hall, Steve, Ph. D.
Nazarov, A. N. (Alexei N.)
Lysenko, V. S. (Vladimir S.)
Description 1 online resource (xiii, 369 pages) : illustrations.
polychrome rdacc
Bibliography Note Includes bibliographical references and author index.
Contents Note continued: Substrate effect on the output conductance frequency response of SOI MOSFETs / V. Kilchytska / D. Levacq / D. Lederer / G. Pailloncy / J.-P. Raskin / D. Flandre -- Investigation of compressive strain effects induced by STI and ESL / S. Zaouia / S. Cristoloveanu / A.H. Perera -- Charge trapping phenomena in single electron NVM SOI devices fabricated by a self-aligned quantum dot technology / A. Nazarov / V. Lysenko / X. Tang / N. Reckinger / V. Bayot -- Variability in nanoscale UTB SOI devices and its impact on circuits and systems / A. Asenov / K. Samsudin -- Electron transport in silicon-on-insulator nanodevices / F. Gamiz / A. Godoy / C. Sampedro -- All quantum simulation of ultrathin SOI MOSFETs / A. Orlikovsky / V. Vyurkov / V. Lukichev / I. Semenikhin / A. Khomyakov -- Resonant tunneling devices on SOI basis / B. Majkusiak -- Mobility modeling in SOI FETs for different substrate orientations and strain conditions / V. Sverdlov / E. Ungersboeck / H. Kosina.
Summary The book details many of the key issues associated with the scaling to nano-dimensions of silicon-on-insulator structures. Some papers offer new insight particularly at the device/circuit interface as appropriate for SOI which is fast becoming a mainstream technology. One of the key issues concerns mobility degradation in SOI films less than about 5nm. The advantages of combining scaled SOI devices with high permittivity (k) dielectric indicates that potential solutions are indeed available down to the 22nm node even with 5nm SOI films. A further key issue and potential 'show stopper' for SOI CMOS is highlighted in a number of invited and contributed papers addressing atomistic level effects. Results are presented for Monte Carlo and drift/diffusion modelling together with device compact models and circuit level simulation and this provided for a broad exposure of the problems from intrinsic physics to the circuit level. The scaling to nano-dimensions takes the technology into the realms of quantum effects and a number of papers addressed this aspect from both the technological and physics aspects. The scope of potential applications for quantum dots, quantum wires and nanotubes are considered. The use of semiconductor materials other than Si, on insulator, is featured in some sections of the book. The potential of III/V, Ge and other materials to facilitate continuation down the roadmap is illustrated by a review of the state-of-the-art.
Note English.
Print version record.
ISBN 9781402063800
9781402063794 (pbk.)
1402063792 (pbk.)
ISBN/ISSN 10.1007/978-1-4020-6380-0
OCLC # 189048352
Link Springer e-books
Additional Format Print version: NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices (2006 : Sudak, Ukraine). Nanoscaled semiconductor-on-insulator structures and devices. Dordrecht : Springer, 2007 1402063784 9781402063787 (OCoLC)166322330

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